The improvement in the gate-drain leakage current densities and breakdown of thick GaN-capped AlGaN/GaN HEMTs was discussed. It was found that by lowering the Si doping sheet density, the electric field in the GaN cap in the was decreased, and thus reduced the gate leakage. 8.5W/mm with a power-added efficiency (PAE) of 57% was achieved from unpassivated HEMTs on sapphire. It was also found that by replacing the GaN cap by a thick graded AlGaN layer had reduced gate leakage and increased breakdown while retaining high carrier density.
Improved high power thick-GaN-capped AlGaN/GaN HEMTs without surface passivation / Shen, L; Buttari, D.; Heikman, S.; Chini, Alessandro; Coffie, R.; Mccarthy, L.; Chakraborty, A.; Keller, S.; Denbaars, S. P.; Mishra, U. K.. - (2004), pp. 39-40. (Intervento presentato al convegno Device Research Conference - Conference Digest, 62nd DRC tenutosi a Notre Dame, IN, USA nel 2004) [10.1109/DRC.2004.1367773].
Improved high power thick-GaN-capped AlGaN/GaN HEMTs without surface passivation
CHINI, Alessandro;
2004
Abstract
The improvement in the gate-drain leakage current densities and breakdown of thick GaN-capped AlGaN/GaN HEMTs was discussed. It was found that by lowering the Si doping sheet density, the electric field in the GaN cap in the was decreased, and thus reduced the gate leakage. 8.5W/mm with a power-added efficiency (PAE) of 57% was achieved from unpassivated HEMTs on sapphire. It was also found that by replacing the GaN cap by a thick graded AlGaN layer had reduced gate leakage and increased breakdown while retaining high carrier density.
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