Drain current instabilities and degradation in GaN-based devices are reviewed by discussing the experimental techniques adopted for their characterization as well as the physical mechanisms leading to the observed phenomena.
Instabilities and degradation in GaN-based devices / Meneghesso, G.; Verzellesi, Giovanni; Pierobon, R.; Rampazzo, F.; Chini, Alessandro; Zanoni, E.. - (2003). (Intervento presentato al convegno 12th European Heterostructure Technology Workshop, HETECH 2003 tenutosi a La Casona del Pinar, San Rafael, Spain nel 12–15 October 2003).
Instabilities and degradation in GaN-based devices
VERZELLESI, Giovanni;CHINI, Alessandro;
2003
Abstract
Drain current instabilities and degradation in GaN-based devices are reviewed by discussing the experimental techniques adopted for their characterization as well as the physical mechanisms leading to the observed phenomena.
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