The experimentally observed DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors has been analyzed and discussed by means of pulsed measurements and spectroscopic techniques.
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques / Zanoni, E.; Chini, Alessandro; Stocco, A.; Rossetto, I.; Meneghini, M.; Rampazzo, F.; Ronchi, N.; Tazzoli, A.; Verzellesi, Giovanni; Meneghesso, G.. - (2010). (Intervento presentato al convegno 5th Space Agency – MOD Round Table Workshop on GaN Component Technologies tenutosi a Noordwijk (The Netherlands) nel 2-3 September 2010).
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques
CHINI, Alessandro;VERZELLESI, Giovanni;
2010
Abstract
The experimentally observed DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors has been analyzed and discussed by means of pulsed measurements and spectroscopic techniques.Pubblicazioni consigliate
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