A model based on the key parameters of the device, such as the 2DEG carrier concentration and its mobility, as well as the active area geometry, will be presented and discussed.
Design of GaN HEMTs for Power Switching Operation / Esposto, Michele; Park, P. S.; Nath, D. N.; Krishnamoorty, S.; Akyol, F.; DI LECCE, Valerio; Chini, Alessandro; Rajan, S.. - (2010). (Intervento presentato al convegno 19th European Workshop on Heterostructure Technology - HETECH 2010 tenutosi a Fodele, Crete nel 18-20 October 2010).
Design of GaN HEMTs for Power Switching Operation
ESPOSTO, Michele;DI LECCE, Valerio;CHINI, Alessandro;
2010
Abstract
A model based on the key parameters of the device, such as the 2DEG carrier concentration and its mobility, as well as the active area geometry, will be presented and discussed.
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