The increase of gate leakage current induced by high voltage gate reverse bias is one of the main reliability concerns for Gallium Nitride HEMTs [1]-[4]. In this work we tested AlGaN/GaN HEMTs with off-state critical voltage > 100 V. We show that the on-state degradation of those devices can be unambiguously attributed to hot-electrons.
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors / Rampazzo, F.; Stocco, A.; Silvestri, R.; Meneghini, M.; Ronchi, N.; Bisi, D.; Soci, Fabio; Chini, Alessandro; Meneghesso, G.; Zanoni, E.. - (2011). (Intervento presentato al convegno 20th European Workshop on Heterostructure Technology - HETECH 2011 tenutosi a Lille, France nel 7-9 Nov 2011).
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors
SOCI, FABIO;CHINI, Alessandro;
2011
Abstract
The increase of gate leakage current induced by high voltage gate reverse bias is one of the main reliability concerns for Gallium Nitride HEMTs [1]-[4]. In this work we tested AlGaN/GaN HEMTs with off-state critical voltage > 100 V. We show that the on-state degradation of those devices can be unambiguously attributed to hot-electrons.
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