A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance Cgs of the GaN HEMT device. Another single-ended Class B power amplifier without the gate diode is also designed for comparison. The circuit with the pre-linearization gate diode demonstrates at least 4dB improvement on 3rd order intermodulation distortion (IMD3) performance over the one without the diode over the useful power range in two-tone measurement.

High linearity GaN HEMT power amplifier with pre-linearization gate diode / Xie, S.; Paidi, V.; Heikman, S.; Shen, L.; Chini, Alessandro; Mishra, U. K.; Rodwell, M. J. W.; Long, S. I.. - In: INTERNATIONAL JOURNAL OF HIGH SPEED ELECTRONICS. - ISSN 0129-1564. - ELETTRONICO. - 14(3):(2004), pp. 847-852. [10.1142/S0129156404002934]

High linearity GaN HEMT power amplifier with pre-linearization gate diode

CHINI, Alessandro;
2004

Abstract

A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance Cgs of the GaN HEMT device. Another single-ended Class B power amplifier without the gate diode is also designed for comparison. The circuit with the pre-linearization gate diode demonstrates at least 4dB improvement on 3rd order intermodulation distortion (IMD3) performance over the one without the diode over the useful power range in two-tone measurement.
2004
14(3)
847
852
Xie, S.; Paidi, V.; Heikman, S.; Shen, L.; Chini, Alessandro; Mishra, U. K.; Rodwell, M. J. W.; Long, S. I.
High linearity GaN HEMT power amplifier with pre-linearization gate diode / Xie, S.; Paidi, V.; Heikman, S.; Shen, L.; Chini, Alessandro; Mishra, U. K.; Rodwell, M. J. W.; Long, S. I.. - In: INTERNATIONAL JOURNAL OF HIGH SPEED ELECTRONICS. - ISSN 0129-1564. - ELETTRONICO. - 14(3):(2004), pp. 847-852. [10.1142/S0129156404002934]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1108716
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