We present results from a combined experimental and numerical investigation of trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes. We show that the excess forward leakage current in single-quantum-well InGaN/GaN light-emitting diodes can be explained by non-local tunneling-into-traps processes and subsequent non-radiative recombination with free carriers.
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes / Mandurrino, M.; Goano, M.; Dominici, S.; Vallone, M.; Bertazzi, F.; Ghione, G.; Bernabei, Mario; Rovati, Luigi; Verzellesi, Giovanni; Meneghini, M.; Meneghesso, G.; Zanoni, E.. - STAMPA. - 9571:(2015), pp. 95710U-1-95710U-6. (Intervento presentato al convegno SPIE Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems tenutosi a San Diego, California, USA nel August 09, 2015) [10.1117/12.2187443].
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes
BERNABEI, MARIO;ROVATI, Luigi;VERZELLESI, Giovanni;
2015
Abstract
We present results from a combined experimental and numerical investigation of trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes. We show that the excess forward leakage current in single-quantum-well InGaN/GaN light-emitting diodes can be explained by non-local tunneling-into-traps processes and subsequent non-radiative recombination with free carriers.
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