The breakdown (TDDB/SILC) characteristics of nMOS transistors with hafnium-based gate dielectric stacks of various zirconium content were investigated. It is found that the gate stack composition affects the SILC-voltage dependency while the voltage value chosen for SILC monitoring impacts significantly the SILC-based lifetime projection. For the worst case lifetime evaluation, SILC should be monitored at its maximum value rather than at any pre-defined, fixed voltage
New insights into SILC-based life time extraction / Young, C. D.; Bersuker, G.; Jo, M.; Matthews, K.; Huang, J.; Deora, S.; Ang, K. W.; Ngai, T.; Hobbs, C.; Kirsch, P. D.; Padovani, A.; Larcher, Luca. - Article number 6241854:(2012). (Intervento presentato al convegno 2012 IEEE International Reliability Physics Symposium tenutosi a Anaheim, CA; United States nel 15/04/2012) [10.1109/IRPS.2012.6241854].
New insights into SILC-based life time extraction
Padovani, A.;LARCHER, Luca
2012
Abstract
The breakdown (TDDB/SILC) characteristics of nMOS transistors with hafnium-based gate dielectric stacks of various zirconium content were investigated. It is found that the gate stack composition affects the SILC-voltage dependency while the voltage value chosen for SILC monitoring impacts significantly the SILC-based lifetime projection. For the worst case lifetime evaluation, SILC should be monitored at its maximum value rather than at any pre-defined, fixed voltage
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
