In this work we investigate the charge transport in sub-stoichiometric TiOx for RRAM applications. We explored the atomic defect configurations actively assisting the charge transport in sub-stoichiometric TiOx through a multi-scale approach. We combined density-functional-theory-based non-equilibrium Green's function approach (DFT-NEGF) with physical-based trap assisted tunneling (TAT) modeling to identify the defects dominating the current conduction mechanism and the physical parameters of the defects responsible for the trap-assisted tunneling (TAT). The values of the thermal ionization energy ET and relaxation energy EREL extracted are 0.35-0.4eV and 0.7eV, respectively.
Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application / Pirrotta, Onofrio; Padovani, Andrea; Larcher, Luca; L., Zhao; B., Magyari Köpe; Y., Nishi. - art. no. 6931557:(2014), pp. 37-40. (Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices, SISPAD tenutosi a Mielparque YokohamaYokohama; Japan nel 9/09/2014) [10.1109/SISPAD.2014.6931557].
Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application
PIRROTTA, Onofrio;PADOVANI, ANDREA;LARCHER, Luca;
2014
Abstract
In this work we investigate the charge transport in sub-stoichiometric TiOx for RRAM applications. We explored the atomic defect configurations actively assisting the charge transport in sub-stoichiometric TiOx through a multi-scale approach. We combined density-functional-theory-based non-equilibrium Green's function approach (DFT-NEGF) with physical-based trap assisted tunneling (TAT) modeling to identify the defects dominating the current conduction mechanism and the physical parameters of the defects responsible for the trap-assisted tunneling (TAT). The values of the thermal ionization energy ET and relaxation energy EREL extracted are 0.35-0.4eV and 0.7eV, respectively.
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