We present results from a combined experimental and numerical investigation of a blue InGaN/GaN LED test structure grown on a SiC substrate, confirming that tunneling represents a critical contribution to the sub-threshold forward bias current and discussing the relative importance of different trap-assisted electron tunneling processes.
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation / Mandurrino, M.; Verzellesi, Giovanni; Goano, M.; Vallone, M. E.; Bertazzi, F.; Ghione, G.; Meneghini, M.; Meneghesso, G.; Zanoni, E.. - ELETTRONICO. - -:(2014), pp. 13-14. (Intervento presentato al convegno 14th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2014 tenutosi a Palma de Mallorca, Spain nel September 1-4, 2014) [10.1109/NUSOD.2014.6935332].
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation
VERZELLESI, Giovanni;
2014
Abstract
We present results from a combined experimental and numerical investigation of a blue InGaN/GaN LED test structure grown on a SiC substrate, confirming that tunneling represents a critical contribution to the sub-threshold forward bias current and discussing the relative importance of different trap-assisted electron tunneling processes.
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