This paper presents an extension of the theoretical approach for both the short- and long-range components of the Coulomb interaction among carriers in semiconductors to the case of an arbitrary isotropic multiband model, devised for Monte Carlo simulation of silicon devices. The analytical and numerical aspects of the model are discussed in detail. Results for the effect of the Coulomb interaction on the carrier distribution function and on the energy-loss properties of the carrier gas are presented for the case of electrons in homogeneous and inhomogeneous silicon structures.
A MULTIBAND MONTE-CARLO APPROACH TO COULOMB INTERACTION FOR DEVICE ANALYSIS / Abramo, A; Brunetti, Rossella; Jacoboni, Carlo; Venturi, F; Sangiorgi, E.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 76:(1994), pp. 5786-5794.
A MULTIBAND MONTE-CARLO APPROACH TO COULOMB INTERACTION FOR DEVICE ANALYSIS
BRUNETTI, Rossella;JACOBONI, Carlo;
1994
Abstract
This paper presents an extension of the theoretical approach for both the short- and long-range components of the Coulomb interaction among carriers in semiconductors to the case of an arbitrary isotropic multiband model, devised for Monte Carlo simulation of silicon devices. The analytical and numerical aspects of the model are discussed in detail. Results for the effect of the Coulomb interaction on the carrier distribution function and on the energy-loss properties of the carrier gas are presented for the case of electrons in homogeneous and inhomogeneous silicon structures.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
