Sfoglia per Serie
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations
2003 Lucci, L.; Esseni, D.; Loo, J.; Ponomarev, Y.; Selmi, L.; Abramo, A.; Sangiorgi, E.
Quantum electronics and compound semiconductors - HEMTs: Physics and new technologies
2004 Suemitsu, T.; Verzellesi, G.
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
2017 Hahn, H.; Deshpande, V.; Caruso, E.; Sant, S.; O'Connor, E.; Baumgartner, Y.; Sousa, M.; Caimi, D.; Olziersky, A.; Palestri, P.; Selmi, L.; Schenk, A.; Czornomaz, L.
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs
2011 Conzatti, Francesco; M. G., Pala; Esseni, David; E., Bano; Selmi, Luca
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations | 1-gen-2003 | Lucci, L.; Esseni, D.; Loo, J.; Ponomarev, Y.; Selmi, L.; Abramo, A.; Sangiorgi, E. | |
| Quantum electronics and compound semiconductors - HEMTs: Physics and new technologies | 1-gen-2004 | Suemitsu, T.; Verzellesi, G. | |
| A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance | 1-gen-2017 | Hahn, H.; Deshpande, V.; Caruso, E.; Sant, S.; O'Connor, E.; Baumgartner, Y.; Sousa, M.; Caimi, D.; Olziersky, A.; Palestri, P.; Selmi, L.; Schenk, A.; Czornomaz, L. | |
| A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs | 1-gen-2011 | Conzatti, Francesco; M. G., Pala; Esseni, David; E., Bano; Selmi, Luca |
Legenda icone
- file ad accesso aperto
- file disponibili sulla rete interna
- file disponibili agli utenti autorizzati
- file disponibili solo agli amministratori
- file sotto embargo
- nessun file disponibile