Sfoglia per Serie
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects
2017 Badami, O.; Driussi, F.; Palestri, P.; Selmi, L.; Esseni, D.
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes
2017 Rau, M.; Caruso, Enrico; Lizzit, D.; Palestri, Pierpaolo; Esseni, David; Schenk, A.; Selmi, Luca; Luisier, M.
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations
2003 Lucci, L.; Esseni, D.; Loo, J.; Ponomarev, Y.; Selmi, L.; Abramo, A.; Sangiorgi, E.
Quantum electronics and compound semiconductors - HEMTs: Physics and new technologies
2004 Suemitsu, T.; Verzellesi, G.
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
2017 Hahn, H.; Deshpande, V.; Caruso, E.; Sant, S.; O'Connor, E.; Baumgartner, Y.; Sousa, M.; Caimi, D.; Olziersky, A.; Palestri, P.; Selmi, L.; Schenk, A.; Czornomaz, L.
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs
2011 Conzatti, Francesco; M. G., Pala; Esseni, David; E., Bano; Selmi, Luca
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