Sfoglia per Serie
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications
2022 Asanovski, R.; Grill, A.; Franco, J.; Palestri, P.; Beckers, A.; Kaczer, B.; Selmi, L.
New model of tunnelling current and SILC in ultra-thin oxides
1998 Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G.
Novel 3D random-network model for threshold switching of phase-change memories
2013 Piccinini, Enrico; Cappelli, Andrea; Xiong, Feng; Behnam, Ashkan; Buscemi, Fabrizio; Brunetti, Rossella; Rudan, Massimo; Pop, Eric; Jacoboni, Carlo
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps
2012 Meneghini, M.; Bertin, M.; Dal Santo, G.; Stocco, A.; Chini, Alessandro; Marcon, D.; Malinowski, P. E.; Mura, G.; Musu, E.; Vanzi, M.; Meneghesso, G.; Zanoni, E.
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects
2017 Badami, O.; Driussi, F.; Palestri, P.; Selmi, L.; Esseni, D.
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes
2017 Rau, M.; Caruso, Enrico; Lizzit, D.; Palestri, Pierpaolo; Esseni, David; Schenk, A.; Selmi, Luca; Luisier, M.
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations
2003 Lucci, L.; Esseni, D.; Loo, J.; Ponomarev, Y.; Selmi, L.; Abramo, A.; Sangiorgi, E.
Quantum electronics and compound semiconductors - HEMTs: Physics and new technologies
2004 Suemitsu, T.; Verzellesi, G.
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
2017 Hahn, H.; Deshpande, V.; Caruso, E.; Sant, S.; O'Connor, E.; Baumgartner, Y.; Sousa, M.; Caimi, D.; Olziersky, A.; Palestri, P.; Selmi, L.; Schenk, A.; Czornomaz, L.
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs
2011 Conzatti, Francesco; M. G., Pala; Esseni, David; E., Bano; Selmi, Luca
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications | 1-gen-2022 | Asanovski, R.; Grill, A.; Franco, J.; Palestri, P.; Beckers, A.; Kaczer, B.; Selmi, L. | |
| New model of tunnelling current and SILC in ultra-thin oxides | 1-gen-1998 | Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G. | |
| Novel 3D random-network model for threshold switching of phase-change memories | 1-gen-2013 | Piccinini, Enrico; Cappelli, Andrea; Xiong, Feng; Behnam, Ashkan; Buscemi, Fabrizio; Brunetti, Rossella; Rudan, Massimo; Pop, Eric; Jacoboni, Carlo | |
| A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps | 1-gen-2012 | Meneghini, M.; Bertin, M.; Dal Santo, G.; Stocco, A.; Chini, Alessandro; Marcon, D.; Malinowski, P. E.; Mura, G.; Musu, E.; Vanzi, M.; Meneghesso, G.; Zanoni, E. | |
| Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects | 1-gen-2017 | Badami, O.; Driussi, F.; Palestri, P.; Selmi, L.; Esseni, D. | |
| Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes | 1-gen-2017 | Rau, M.; Caruso, Enrico; Lizzit, D.; Palestri, Pierpaolo; Esseni, David; Schenk, A.; Selmi, Luca; Luisier, M. | |
| Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations | 1-gen-2003 | Lucci, L.; Esseni, D.; Loo, J.; Ponomarev, Y.; Selmi, L.; Abramo, A.; Sangiorgi, E. | |
| Quantum electronics and compound semiconductors - HEMTs: Physics and new technologies | 1-gen-2004 | Suemitsu, T.; Verzellesi, G. | |
| A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance | 1-gen-2017 | Hahn, H.; Deshpande, V.; Caruso, E.; Sant, S.; O'Connor, E.; Baumgartner, Y.; Sousa, M.; Caimi, D.; Olziersky, A.; Palestri, P.; Selmi, L.; Schenk, A.; Czornomaz, L. | |
| A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs | 1-gen-2011 | Conzatti, Francesco; M. G., Pala; Esseni, David; E., Bano; Selmi, Luca |
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