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Mostrati risultati da 9 a 27 di 27
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Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability 1-gen-2019 Pesic, M.; Padovani, A.; Slcsazeck, S.; Mikolajick, T.; Larcher, L.
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 1-gen-2018 Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A.
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 1-gen-2001 Esseni, David; M., Mastrapasqua; C., Fiegna; G. K., Celler; Selmi, Luca; Sangiorgi, Enrico
Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors 1-gen-2018 Daus, A.; Han, S.; Knobelspies, S.; Cantarella, G.; Vogt, C.; Munzenrieder, N.; Troster, G.
Investigating the Statistical-Physical Nature of MgO Dielectric Breakdown in STT-MRAM at Different Operating Conditions 1-gen-2019 Lim, J. H.; Raghavan, N.; Padovani, A.; Kwon, J. H.; Yamane, K.; Yang, H.; Naik, V. B.; Larcher, L.; Lee, K. H.; Pey, K. L.
Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling 1-gen-2010 Molas, G.; Masoero, L.; Blaise, P.; Padovani, A.; Colonna, J. P.; Vianello, E.; Bocquet, M.; Nowak, E.; Gasulla, M.; Cueto, O.; Grampeix, H.; Martin, F.; Kies, R.; Brianceau, P.; Gely, M.; Papon, A. M.; Lafond, D.; Barnes, J. P.; Licitra, C.; Ghibaudo, G.; Larcher, L.; Deleonibus, S.; De Salvo, B.
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 1-gen-2010 G., Bersuker; D. C., Gilmer; D., Veksler; J., Yum; H., Park; S., Lian; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría; W., Taylor; P. D., Kirsch; R., Jammy
Microscopic understanding and modeling of HfO2 RRAM device physics 1-gen-2012 Larcher, Luca; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; G., Bersuker
Multiscale modeling of neuromorphic computing: From materials to device operations 1-gen-2018 Larcher, L.; Padovani, A.; Di Lecce, V.
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 1-gen-2022 Asanovski, R.; Grill, A.; Franco, J.; Palestri, P.; Beckers, A.; Kaczer, B.; Selmi, L.
New model of tunnelling current and SILC in ultra-thin oxides 1-gen-1998 Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G.
Novel 3D random-network model for threshold switching of phase-change memories 1-gen-2013 Piccinini, Enrico; Cappelli, Andrea; Xiong, Feng; Behnam, Ashkan; Buscemi, Fabrizio; Brunetti, Rossella; Rudan, Massimo; Pop, Eric; Jacoboni, Carlo
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 1-gen-2012 Meneghini, M.; Bertin, M.; Dal Santo, G.; Stocco, A.; Chini, Alessandro; Marcon, D.; Malinowski, P. E.; Mura, G.; Musu, E.; Vanzi, M.; Meneghesso, G.; Zanoni, E.
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 1-gen-2017 Badami, O.; Driussi, F.; Palestri, P.; Selmi, L.; Esseni, D.
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 1-gen-2017 Rau, M.; Caruso, Enrico; Lizzit, D.; Palestri, Pierpaolo; Esseni, David; Schenk, A.; Selmi, Luca; Luisier, M.
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations 1-gen-2003 Lucci, L.; Esseni, D.; Loo, J.; Ponomarev, Y.; Selmi, L.; Abramo, A.; Sangiorgi, E.
Quantum electronics and compound semiconductors - HEMTs: Physics and new technologies 1-gen-2004 Suemitsu, T.; Verzellesi, G.
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 1-gen-2017 Hahn, H.; Deshpande, V.; Caruso, E.; Sant, S.; O'Connor, E.; Baumgartner, Y.; Sousa, M.; Caimi, D.; Olziersky, A.; Palestri, P.; Selmi, L.; Schenk, A.; Czornomaz, L.
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 1-gen-2011 Conzatti, Francesco; M. G., Pala; Esseni, David; E., Bano; Selmi, Luca
Mostrati risultati da 9 a 27 di 27
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