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Mostrati risultati da 1 a 20 di 38
Titolo Data di pubblicazione Autore(i) File
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories 1-gen-2010 A., Suhane; A., Arreghini; G., Van den bosch; Vandelli, Luca; Padovani, Andrea; L., Breuil; Larcher, Luca; K., De Meyer; J., Van Houdt
Modeling Temperature Dependency (6 - 400K) of the Leakage Current Through the SiO2/High-K Stacks 1-gen-2010 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Bersuker; R. G., Southwick III; W. B., Knowlton
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 1-gen-2010 G., Bersuker; D. C., Gilmer; D., Veksler; J., Yum; H., Park; S., Lian; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría; W., Taylor; P. D., Kirsch; R., Jammy
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability 1-gen-2010 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; Antonio, Arreghini; Geert Van den, Bosch; Malgorzata, Jurczak; Jan Van, Houdt; Vincenzo Della, Marca; Pavan, Paolo
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 1-gen-2011 Larcher, Luca; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo
Modeling of the forming operation in HfO2-base resistive switching memories 1-gen-2011 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Bersuker; D., Gilmer; Pavan, Paolo
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 1-gen-2011 Vandelli, Luca; G., Bersuker; Padovani, Andrea; J. H., Yum; Larcher, Luca; Pavan, Paolo
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 1-gen-2011 C., Cagli; J., Buckley; V., Jousseaume; A., Salaun; H., Grampeix; J. F., Nodin; H., Feldis; A., Persico; J., Cluzel; P., Lorenzi; L., Massari; R., Rao; F., Irrera; T., Cabout; F., Aussenac; C., Carabasse; M., Coue; P., Calka; E., Martinez; L., Perniola; P., Blaise; Z., Fang; Y. H., Yu; G., Ghibaudo; D., Deleruyelle; M., Bocquet; C., Muller; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; Larcher, Luca; G., Reimbold; B., de Salvo
Low Power RRAM with Improved HRS/LRS Uniformity through Efficient Filament Control Using CVS Forming 1-gen-2011 A., Kalantarian; G., Bersuker; D. C., Gilmer; B., Butcher; Padovani, Andrea; Vandelli, Luca; Larcher, Luca; R., Geer; Y., Nishi; P., Kirsch
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal 1-gen-2011 W. H., Liu; K. L., Pey; X., Wu; N., Raghavan; Padovani, Andrea; Larcher, Luca; Vandelli, Luca; M., Bosman; T., Kauerauf
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks 1-gen-2011 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; R. G., Southwick III; W. B., Knowlton; G., Bersuker
Metal oxide resistive memory switching mechanism based on conductive filament properties 1-gen-2011 G., Bersuker; D. C., Gilmer; D., Veksler; P., Kirsch; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría
Physical modeling of charge transport and degradation in HfO 2 stacks for logic device and memory applications 1-gen-2011 Larcher, Luca; Padovani, Andrea; Vandelli, Luca; G., Bersuker
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 1-gen-2011 Padovani, Andrea; A., Arreghini; Vandelli, Luca; Larcher, Luca; G., Van den Bosh; Pavan, Paolo; J., Van Houdt
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 1-gen-2011 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo
Grain boundary-driven leakage path formation in HfO2 dielectrics 1-gen-2011 G., Bersuker; J., Yum; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; V., Iglesias; M., Porti; M., Nafría; K., Mckenna; A., Shluger; P., Kirsch; R., Jammy
Modeling the charge transport and degradation in HfO 2 dielectric for reliability improvement and life-time predictions in logic and memory devices 1-gen-2011 Padovani, Andrea; Larcher, Luca; Vandelli, Luca; Pirrotta, Onofrio; Pavan, Paolo
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability 1-gen-2012 Padovani, Andrea; A., Arreghini; Vandelli, Luca; Larcher, Luca; G., Van den bosch; J., Van Houdt
Microscopic understanding and modeling of HfO2 RRAM device physics 1-gen-2012 Larcher, Luca; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; G., Bersuker
Random telegraph noise (RTN) in scaled RRAM devices 1-gen-2013 D., Veksler; G., Bersuker; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; A., Muraviev; B., Chakrabarti; E., Vogel; D. C., Gilmer; P. D., Kirsch
Mostrati risultati da 1 a 20 di 38
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