Sfoglia per Autore
A new model for tunnelling conduction in ultra-thin dielectrics
1998 Larcher, Luca; A., Paccagnella; A., Scarpa; G., Ghidini
New double-box model for SILC and tunnel current in ultra-thin MOS devices
1998 Larcher, Luca; A., Paccagnella; A., Scarpa; G., Ghidini
A new model for tunneling conduction in ultra-thin dielectrics
1998 Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G.
New model of tunnelling current and SILC in ultra-thin oxides
1998 Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G.
Temperature dependence of stress induced leakage current in ultra-thin oxides
1999 M., Ceschia; A., Paccagnella; A., Cester; Larcher, Luca; G., Ghidini
A model of radiation induced leakage current (RILC) in ultra-thin gate oxides
1999 Larcher, Luca; A., Paccagnella; M., Ceschia; G., Ghidini
Radiation effects on floating-gate memory cells
2001 G., Cellere; P., Pellati; P., Olivo; A., Chimenton; J., Wyss; Larcher, Luca; A., Paccagnella
A model of the stress induced leakage current in gate oxides
2001 Larcher, Luca; A., Paccagnella; G., Ghidini
Impact of the As dose in 0.35 mu m EEPROM technology: characterization and modeling
2001 N., Galbiati; G., Ghidini; C., Cremonesi; Larcher, Luca
A New Compact Model of Floating Gate Non-Volatile Memory Cells
2001 Larcher, Luca; Pavan, Paolo; F., Gattel; L., Albani; A., Marmiroli
Gate current in ultrathin MOS capacitors: a new model of tunnel current
2001 Larcher, Luca; A., Paccagnella; G., Ghidini
A new compact Spice-like model of E2PROM Memory cells suitable for DC and transient simulations
2001 Larcher, Luca; Pavan, Paolo; Cuozzo, M.; Marmiroli, A.
A new model of gate capacitance as a simple tool to extract MOS parameters
2001 Larcher, Luca; Pavan, Paolo; F., Pellizzer; G., Ghidini
Bias and W/L dependence of capacitive coupling coefficients in floating gate memory cells
2001 Larcher, Luca; Pavan, Paolo; L., Albani; T., Ghilardi
A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling
2002 Larcher, Luca; Pavan, Paolo
Single Event Charge Loss in EPROMs
2002 G., Cellere; Larcher, Luca; J., Wyss; A., Candelori; P., Caprara; A., Paccagnella
A Complete Study of SILC Effects on EEPROM Reliability
2002 Larcher, Luca; S., Bertulu; Pavan, Paolo
SILC effects on EEPROM memory cell reliability
2002 Larcher, Luca; Bertulu, S.; Pavan, Paolo
Plasma-induced Micro Breakdown in small area MOSFETs
2002 G., Cellere; Larcher, Luca; M. G., Valentini; A., Paccagnella
Micro breakdown in small-area ultra-thin gate oxide
2002 Cellere, G.; Larcher, Luca; Valentini, M. G.; Paccagnella, A.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
A new model for tunnelling conduction in ultra-thin dielectrics | 1-gen-1998 | Larcher, Luca; A., Paccagnella; A., Scarpa; G., Ghidini | |
New double-box model for SILC and tunnel current in ultra-thin MOS devices | 1-gen-1998 | Larcher, Luca; A., Paccagnella; A., Scarpa; G., Ghidini | |
A new model for tunneling conduction in ultra-thin dielectrics | 1-gen-1998 | Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G. | |
New model of tunnelling current and SILC in ultra-thin oxides | 1-gen-1998 | Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G. | |
Temperature dependence of stress induced leakage current in ultra-thin oxides | 1-gen-1999 | M., Ceschia; A., Paccagnella; A., Cester; Larcher, Luca; G., Ghidini | |
A model of radiation induced leakage current (RILC) in ultra-thin gate oxides | 1-gen-1999 | Larcher, Luca; A., Paccagnella; M., Ceschia; G., Ghidini | |
Radiation effects on floating-gate memory cells | 1-gen-2001 | G., Cellere; P., Pellati; P., Olivo; A., Chimenton; J., Wyss; Larcher, Luca; A., Paccagnella | |
A model of the stress induced leakage current in gate oxides | 1-gen-2001 | Larcher, Luca; A., Paccagnella; G., Ghidini | |
Impact of the As dose in 0.35 mu m EEPROM technology: characterization and modeling | 1-gen-2001 | N., Galbiati; G., Ghidini; C., Cremonesi; Larcher, Luca | |
A New Compact Model of Floating Gate Non-Volatile Memory Cells | 1-gen-2001 | Larcher, Luca; Pavan, Paolo; F., Gattel; L., Albani; A., Marmiroli | |
Gate current in ultrathin MOS capacitors: a new model of tunnel current | 1-gen-2001 | Larcher, Luca; A., Paccagnella; G., Ghidini | |
A new compact Spice-like model of E2PROM Memory cells suitable for DC and transient simulations | 1-gen-2001 | Larcher, Luca; Pavan, Paolo; Cuozzo, M.; Marmiroli, A. | |
A new model of gate capacitance as a simple tool to extract MOS parameters | 1-gen-2001 | Larcher, Luca; Pavan, Paolo; F., Pellizzer; G., Ghidini | |
Bias and W/L dependence of capacitive coupling coefficients in floating gate memory cells | 1-gen-2001 | Larcher, Luca; Pavan, Paolo; L., Albani; T., Ghilardi | |
A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling | 1-gen-2002 | Larcher, Luca; Pavan, Paolo | |
Single Event Charge Loss in EPROMs | 1-gen-2002 | G., Cellere; Larcher, Luca; J., Wyss; A., Candelori; P., Caprara; A., Paccagnella | |
A Complete Study of SILC Effects on EEPROM Reliability | 1-gen-2002 | Larcher, Luca; S., Bertulu; Pavan, Paolo | |
SILC effects on EEPROM memory cell reliability | 1-gen-2002 | Larcher, Luca; Bertulu, S.; Pavan, Paolo | |
Plasma-induced Micro Breakdown in small area MOSFETs | 1-gen-2002 | G., Cellere; Larcher, Luca; M. G., Valentini; A., Paccagnella | |
Micro breakdown in small-area ultra-thin gate oxide | 1-gen-2002 | Cellere, G.; Larcher, Luca; Valentini, M. G.; Paccagnella, A. |
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