Sfoglia per Autore
A new model for tunnelling conduction in ultra-thin dielectrics
1998 Larcher, Luca; A., Paccagnella; A., Scarpa; G., Ghidini
New double-box model for SILC and tunnel current in ultra-thin MOS devices
1998 Larcher, Luca; A., Paccagnella; A., Scarpa; G., Ghidini
New model of tunnelling current and SILC in ultra-thin oxides
1998 Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G.
A new model for tunneling conduction in ultra-thin dielectrics
1998 Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G.
Temperature dependence of stress induced leakage current in ultra-thin oxides
1999 M., Ceschia; A., Paccagnella; A., Cester; Larcher, Luca; G., Ghidini
A model of radiation induced leakage current (RILC) in ultra-thin gate oxides
1999 Larcher, Luca; A., Paccagnella; M., Ceschia; G., Ghidini
A model of the stress induced leakage current in gate oxides
2001 Larcher, Luca; A., Paccagnella; G., Ghidini
A New Compact Model of Floating Gate Non-Volatile Memory Cells
2001 Larcher, Luca; Pavan, Paolo; F., Gattel; L., Albani; A., Marmiroli
Impact of the As dose in 0.35 mu m EEPROM technology: characterization and modeling
2001 N., Galbiati; G., Ghidini; C., Cremonesi; Larcher, Luca
Radiation effects on floating-gate memory cells
2001 G., Cellere; P., Pellati; P., Olivo; A., Chimenton; J., Wyss; Larcher, Luca; A., Paccagnella
Gate current in ultrathin MOS capacitors: a new model of tunnel current
2001 Larcher, Luca; A., Paccagnella; G., Ghidini
A new compact Spice-like model of E2PROM Memory cells suitable for DC and transient simulations
2001 Larcher, Luca; Pavan, Paolo; Cuozzo, M.; Marmiroli, A.
Bias and W/L dependence of capacitive coupling coefficients in floating gate memory cells
2001 Larcher, Luca; Pavan, Paolo; L., Albani; T., Ghilardi
A new model of gate capacitance as a simple tool to extract MOS parameters
2001 Larcher, Luca; Pavan, Paolo; F., Pellizzer; G., Ghidini
Single Event Charge Loss in EPROMs
2002 G., Cellere; Larcher, Luca; J., Wyss; A., Candelori; P., Caprara; A., Paccagnella
A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling
2002 Larcher, Luca; Pavan, Paolo
A new compact DC model of floating gate memory cells without capacitive coupling coefficients
2002 Larcher, Luca; Pavan, Paolo; S., Pietri; L., Albani; A., Marmiroli
Anomalous charge loss from Floating-Gate Memory Cells due to heavy ions irradiation
2002 G., Cellere; A., Paccagnella; Larcher, Luca; A., Chimenton; J., Wyss; A., Candelori; A., Modelli
A complete study of SILC effects on E2PROM reliability
2002 Larcher, L.; Bertulu, S.; Pavan, P.
Plasma-induced Micro Breakdown in small area MOSFETs
2002 G., Cellere; Larcher, Luca; M. G., Valentini; A., Paccagnella
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
A new model for tunnelling conduction in ultra-thin dielectrics | 1-gen-1998 | Larcher, Luca; A., Paccagnella; A., Scarpa; G., Ghidini | |
New double-box model for SILC and tunnel current in ultra-thin MOS devices | 1-gen-1998 | Larcher, Luca; A., Paccagnella; A., Scarpa; G., Ghidini | |
New model of tunnelling current and SILC in ultra-thin oxides | 1-gen-1998 | Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G. | |
A new model for tunneling conduction in ultra-thin dielectrics | 1-gen-1998 | Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G. | |
Temperature dependence of stress induced leakage current in ultra-thin oxides | 1-gen-1999 | M., Ceschia; A., Paccagnella; A., Cester; Larcher, Luca; G., Ghidini | |
A model of radiation induced leakage current (RILC) in ultra-thin gate oxides | 1-gen-1999 | Larcher, Luca; A., Paccagnella; M., Ceschia; G., Ghidini | |
A model of the stress induced leakage current in gate oxides | 1-gen-2001 | Larcher, Luca; A., Paccagnella; G., Ghidini | |
A New Compact Model of Floating Gate Non-Volatile Memory Cells | 1-gen-2001 | Larcher, Luca; Pavan, Paolo; F., Gattel; L., Albani; A., Marmiroli | |
Impact of the As dose in 0.35 mu m EEPROM technology: characterization and modeling | 1-gen-2001 | N., Galbiati; G., Ghidini; C., Cremonesi; Larcher, Luca | |
Radiation effects on floating-gate memory cells | 1-gen-2001 | G., Cellere; P., Pellati; P., Olivo; A., Chimenton; J., Wyss; Larcher, Luca; A., Paccagnella | |
Gate current in ultrathin MOS capacitors: a new model of tunnel current | 1-gen-2001 | Larcher, Luca; A., Paccagnella; G., Ghidini | |
A new compact Spice-like model of E2PROM Memory cells suitable for DC and transient simulations | 1-gen-2001 | Larcher, Luca; Pavan, Paolo; Cuozzo, M.; Marmiroli, A. | |
Bias and W/L dependence of capacitive coupling coefficients in floating gate memory cells | 1-gen-2001 | Larcher, Luca; Pavan, Paolo; L., Albani; T., Ghilardi | |
A new model of gate capacitance as a simple tool to extract MOS parameters | 1-gen-2001 | Larcher, Luca; Pavan, Paolo; F., Pellizzer; G., Ghidini | |
Single Event Charge Loss in EPROMs | 1-gen-2002 | G., Cellere; Larcher, Luca; J., Wyss; A., Candelori; P., Caprara; A., Paccagnella | |
A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling | 1-gen-2002 | Larcher, Luca; Pavan, Paolo | |
A new compact DC model of floating gate memory cells without capacitive coupling coefficients | 1-gen-2002 | Larcher, Luca; Pavan, Paolo; S., Pietri; L., Albani; A., Marmiroli | |
Anomalous charge loss from Floating-Gate Memory Cells due to heavy ions irradiation | 1-gen-2002 | G., Cellere; A., Paccagnella; Larcher, Luca; A., Chimenton; J., Wyss; A., Candelori; A., Modelli | |
A complete study of SILC effects on E2PROM reliability | 1-gen-2002 | Larcher, L.; Bertulu, S.; Pavan, P. | |
Plasma-induced Micro Breakdown in small area MOSFETs | 1-gen-2002 | G., Cellere; Larcher, Luca; M. G., Valentini; A., Paccagnella |
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