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High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs 1-gen-1995 Borgarino, Mattia; R., Menozzi; Fantini, Fausto; M., Schussler; H. L., Hartnagel
Hot electron degradation of the DC and microwave performance of InAlAs/InGaAs/InP HEMTs 1-gen-1996 Menozzi, R.; Borgarino, M.; Baeyeans, Y.; Van Hove, M.; Fantini, F.
Electrical and thermal local effects simulation for electromigration 1-gen-1996 Borgarino, M.; Castagnini, A.; De Munari, I.; Fantini, F.
Negative Vbe shift due to base dopant outdiffusion in DHBT 1-gen-1996 Borgarino, Mattia; F., Paorici; Fantini, Fausto
On the stability of the DC and RF gain of GaInP/GaAs HBTs 1-gen-1996 Borgarino, M.; Plana, R.; Tartarin, J. G.; Delage, S.; Blanck, H.; Fantini, F.; Graffeuil, J.
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 1-gen-1996 R., Menozzi; Borgarino, Mattia; P., Cova; Y., Baeyens; Fantini, Fausto
Study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress 1-gen-1997 Borgarino, M.; Menozzi, R.; Tasselli, J.; Marty, A.; Fantini, F.
The effect of the base dopant concentration on the stability of Be-doped AlGaAs/GaAs HBTs devices 1-gen-1997 Borgarino, Mattia; R., Losi; Fantini, Fausto; M., Schussler; H. L., Hartnagel; S., Franchi; A., Bosacchi
Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs 1-gen-1997 Borgarino, M.; Tartarin, J. G.; Delage, S.; Plana, R.; Fantini, F.; Graffeuil, J.
Cathodoluminescence investigation of stress-induced Berillium outdiffusion in AlGaAs/GaAs HBTs 1-gen-1997 Cattani, Laura; Salviati, Giancarlo; Borgarino, Mattia; Menozzi, Roberto; Fantini, Fausto; Lazzarini, Laura; Fregonara Carlo, Zanotti
Effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTs 1-gen-1997 Menozzi, R.; Borgarino, M.; Baeyens, Y.; van der Zanden, K.; Van Hove, M.; Fantini, F.
Electrical and thermal simulation of local effects for electromigration 1-gen-1997 Borgarino, Mattia; V., Petrescu; L., Brizzolara; I., De Munari; Fantini, Fausto
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 1-gen-1997 R., Menozzi; Borgarino, Mattia; P., Cova; Y., Baeyens; M., Van Hove; Fantini, Fausto
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 1-gen-1997 R., Menozzi; Borgarino, Mattia; Y., Baeyens; M., Van Hove; Fantini, Fausto
The influence of the emitter orientation on the DC and low frequency noise characteristics of GaInP/GaAs HBTs 1-gen-1998 Borgarino, Mattia; J. G., Tartarin; R., Plana; S., Delage; J., Graffeuil; Fantini, Fausto
A comparison between HBt small-signal model optimization using a genetic algorithm and direct parametric extraction 1-gen-1998 Borgarino, Mattia; R., Menozzi; J., Tasselli; A., Marty
Reliability of Gaas-based HBTs 1-gen-1998 Fantini, Fausto; Borgarino, Mattia; L., Cattani; R., Menozzi
Correlation between burn-in effect and emitter orientation in GaInP/GaAs HBTs 1-gen-1998 Borgarino, M.; Plana, R.; Tartarin, J. G.; Graffeuil, J.; Fantini, F.; Delage, S.
Study of degradation mechanisms in compound semiconductor based devices by SEM-cathodoluminescence 1-gen-1998 Salviati, G.; Zanotti-Fregonara, C.; Borgarino, M.; Lazzarini, L.; Cattani, L.; Cova, P.; Mazzer, M.
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 1-gen-1998 L., Cattani; Borgarino, Mattia; Fantini, Fausto
Mostrati risultati da 1 a 20 di 124
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