Sfoglia per Autore
High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs
1995 Borgarino, Mattia; R., Menozzi; Fantini, Fausto; M., Schussler; H. L., Hartnagel
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS
1996 R., Menozzi; Borgarino, Mattia; P., Cova; Y., Baeyens; Fantini, Fausto
Hot electron degradation of the DC and microwave performance of InAlAs/InGaAs/InP HEMTs
1996 Menozzi, R.; Borgarino, M.; Baeyeans, Y.; Van Hove, M.; Fantini, F.
On the stability of the DC and RF gain of GaInP/GaAs HBTs
1996 Borgarino, M.; Plana, R.; Tartarin, J. G.; Delage, S.; Blanck, H.; Fantini, F.; Graffeuil, J.
Electrical and thermal local effects simulation for electromigration
1996 Borgarino, M.; Castagnini, A.; De Munari, I.; Fantini, F.
Negative Vbe shift due to base dopant outdiffusion in DHBT
1996 Borgarino, Mattia; F., Paorici; Fantini, Fausto
Effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTs
1997 Menozzi, R.; Borgarino, M.; Baeyens, Y.; van der Zanden, K.; Van Hove, M.; Fantini, F.
Cathodoluminescence investigation of stress-induced Berillium outdiffusion in AlGaAs/GaAs HBTs
1997 Cattani, Laura; Salviati, Giancarlo; Borgarino, Mattia; Menozzi, Roberto; Fantini, Fausto; Lazzarini, Laura; Fregonara Carlo, Zanotti
Study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress
1997 Borgarino, M.; Menozzi, R.; Tasselli, J.; Marty, A.; Fantini, F.
The effect of the base dopant concentration on the stability of Be-doped AlGaAs/GaAs HBTs devices
1997 Borgarino, Mattia; R., Losi; Fantini, Fausto; M., Schussler; H. L., Hartnagel; S., Franchi; A., Bosacchi
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs
1997 R., Menozzi; Borgarino, Mattia; P., Cova; Y., Baeyens; M., Van Hove; Fantini, Fausto
Electrical and thermal simulation of local effects for electromigration
1997 Borgarino, Mattia; V., Petrescu; L., Brizzolara; I., De Munari; Fantini, Fausto
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's
1997 R., Menozzi; Borgarino, Mattia; Y., Baeyens; M., Van Hove; Fantini, Fausto
Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs
1997 Borgarino, M.; Tartarin, J. G.; Delage, S.; Plana, R.; Fantini, F.; Graffeuil, J.
A comparison between HBt small-signal model optimization using a genetic algorithm and direct parametric extraction
1998 Borgarino, Mattia; R., Menozzi; J., Tasselli; A., Marty
Reliability of Gaas-based HBTs
1998 Fantini, Fausto; Borgarino, Mattia; L., Cattani; R., Menozzi
Correlation between burn-in effect and emitter orientation in GaInP/GaAs HBTs
1998 Borgarino, M.; Plana, R.; Tartarin, J. G.; Graffeuil, J.; Fantini, F.; Delage, S.
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's
1998 Borgarino, Mattia; R., Plana; S., Delage; H., Blank; Fantini, Fausto; J., Graffeuil
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s.
1998 Borgarino, Mattia; R., Menozzi; Y., Baeyens; P., Cova; Fantini, Fausto
The influence of the emitter orientation on the DC and low frequency noise characteristics of GaInP/GaAs HBTs
1998 Borgarino, Mattia; J. G., Tartarin; R., Plana; S., Delage; J., Graffeuil; Fantini, Fausto
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs | 1-gen-1995 | Borgarino, Mattia; R., Menozzi; Fantini, Fausto; M., Schussler; H. L., Hartnagel | |
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS | 1-gen-1996 | R., Menozzi; Borgarino, Mattia; P., Cova; Y., Baeyens; Fantini, Fausto | |
Hot electron degradation of the DC and microwave performance of InAlAs/InGaAs/InP HEMTs | 1-gen-1996 | Menozzi, R.; Borgarino, M.; Baeyeans, Y.; Van Hove, M.; Fantini, F. | |
On the stability of the DC and RF gain of GaInP/GaAs HBTs | 1-gen-1996 | Borgarino, M.; Plana, R.; Tartarin, J. G.; Delage, S.; Blanck, H.; Fantini, F.; Graffeuil, J. | |
Electrical and thermal local effects simulation for electromigration | 1-gen-1996 | Borgarino, M.; Castagnini, A.; De Munari, I.; Fantini, F. | |
Negative Vbe shift due to base dopant outdiffusion in DHBT | 1-gen-1996 | Borgarino, Mattia; F., Paorici; Fantini, Fausto | |
Effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTs | 1-gen-1997 | Menozzi, R.; Borgarino, M.; Baeyens, Y.; van der Zanden, K.; Van Hove, M.; Fantini, F. | |
Cathodoluminescence investigation of stress-induced Berillium outdiffusion in AlGaAs/GaAs HBTs | 1-gen-1997 | Cattani, Laura; Salviati, Giancarlo; Borgarino, Mattia; Menozzi, Roberto; Fantini, Fausto; Lazzarini, Laura; Fregonara Carlo, Zanotti | |
Study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress | 1-gen-1997 | Borgarino, M.; Menozzi, R.; Tasselli, J.; Marty, A.; Fantini, F. | |
The effect of the base dopant concentration on the stability of Be-doped AlGaAs/GaAs HBTs devices | 1-gen-1997 | Borgarino, Mattia; R., Losi; Fantini, Fausto; M., Schussler; H. L., Hartnagel; S., Franchi; A., Bosacchi | |
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs | 1-gen-1997 | R., Menozzi; Borgarino, Mattia; P., Cova; Y., Baeyens; M., Van Hove; Fantini, Fausto | |
Electrical and thermal simulation of local effects for electromigration | 1-gen-1997 | Borgarino, Mattia; V., Petrescu; L., Brizzolara; I., De Munari; Fantini, Fausto | |
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's | 1-gen-1997 | R., Menozzi; Borgarino, Mattia; Y., Baeyens; M., Van Hove; Fantini, Fausto | |
Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs | 1-gen-1997 | Borgarino, M.; Tartarin, J. G.; Delage, S.; Plana, R.; Fantini, F.; Graffeuil, J. | |
A comparison between HBt small-signal model optimization using a genetic algorithm and direct parametric extraction | 1-gen-1998 | Borgarino, Mattia; R., Menozzi; J., Tasselli; A., Marty | |
Reliability of Gaas-based HBTs | 1-gen-1998 | Fantini, Fausto; Borgarino, Mattia; L., Cattani; R., Menozzi | |
Correlation between burn-in effect and emitter orientation in GaInP/GaAs HBTs | 1-gen-1998 | Borgarino, M.; Plana, R.; Tartarin, J. G.; Graffeuil, J.; Fantini, F.; Delage, S. | |
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's | 1-gen-1998 | Borgarino, Mattia; R., Plana; S., Delage; H., Blank; Fantini, Fausto; J., Graffeuil | |
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. | 1-gen-1998 | Borgarino, Mattia; R., Menozzi; Y., Baeyens; P., Cova; Fantini, Fausto | |
The influence of the emitter orientation on the DC and low frequency noise characteristics of GaInP/GaAs HBTs | 1-gen-1998 | Borgarino, Mattia; J. G., Tartarin; R., Plana; S., Delage; J., Graffeuil; Fantini, Fausto |
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