Sfoglia per Autore
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS
1991 Fabbri, R; Servidori, M; Solmi, S; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Canteri, R.
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON
1991 Meda, L; Cerofolini, Gf; Ottaviani, Giampiero; Tonini, Rita; Corni, Federico; Balboni, R; Anderle, M; Canteri, R; Dierckx, R.
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON
1992 Cerofolini, Gf; Meda, L; Balboni, R; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Anderle, M; Canteri, R.
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects
1992 Corni, Federico; Tonini, Rita; Ottaviani, Giampiero; Servidori, M; Priolo, F.
A fast technique for the quantitative analysis of channeling RBS spectra
1992 Cerofolini, Gf; Corni, Federico; Ottaviani, Giampiero; Tonini, Rita
Processing high-quality silicon for microstrip detectors
1992 Nava, Filippo; Ottaviani, Giampiero; Tonini, Rita; Frabboni, Stefano; A., Alberigi Quaranta; P., Cantoni; P. L., Frabetti; L., Stagni; G., Queirolo; P. F., Manfredi
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID
1992 Cerofolini, Gf; Corni, Federico; Ottaviani, Giampiero; Tonini, Rita
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal
1993 Cerofolini, Gf; Bertoni, S; Meda, L; Balboni, R; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Para, Af
Visible luminescence from silicon by hydrogen implantation and annealing treatments
1994 Pavesi, L; Giebel, G; Tonini, Rita; Corni, Federico; Nobili, Carlo Emanuele; Ottaviani, Giampiero
Recrystallization of strainedlayers with various Gegradients and in the presence of impurities
1994 Corni, Federico; Tonini, Rita; Balboni, R; Vescan, L.
Visible photoluminescence from He‐implanted silicon
1995 D., Bisero; Corni, Federico; Nobili, Carlo Emanuele; Tonini, Rita; Ottaviani, Giampiero; C., Mazzoleni; L., Pavesi
Hydrogen precipitation in highly oversaturated single-crystalline silicon
1995 Cerofolini, Gf; Balboni, R; Bisero, D; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Brusa, Rs; Zecca, A; Ceschini, M; Giebel, G; Pavesi, L.
Hydrogen determination in Si-rich oxide thin films
1996 Monelli, A; Corni, Federico; Tonini, Rita; Ferrari, C; Ottaviani, Giampiero; Zanotti, L; Queirolo, G.
Silicon interstitials generation during the exposure of silicon to hydrogen plasma
1996 Tonini, Rita; Monelli, A; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Queirolo, G.
Bandgap widening in quantum sieves
1996 Cerofolini, Gf; Meda, L; Bisero, D; Corni, Federico; Ottaviani, Giampiero; Tonini, Rita
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si
1996 Corni, Federico; Frabboni, Stefano; Tonini, Rita; Ottaviani, Giampiero; Queirolo, G.
Radiation enhanced transport of hydrogen in SiO2
1997 Corni, Federico; Monelli, A; Ottaviani, Giampiero; Tonini, Rita; Queirolo, G; Zanotti, L.
Evolution of defect profiles in He-implanted silicon studied by slow positrons
1997 Brusa, Rs; Karwasz, Gp; Tiengo, N; Zecca, A; Corni, Federico; Nobili, Carlo Emanuele; Ottaviani, Giampiero; Tonini, Rita
Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation
1997 G., Ghislotti; B., Nielsen; P., Asoka Kumar; K. G., Lynn; L. F., Di Mauro; Corni, Federico; Tonini, Rita
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen
1997 Frabboni, Stefano; Gambetta, F; Tonini, Rita; Balboni, R; Armigliato, A.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS | 1-gen-1991 | Fabbri, R; Servidori, M; Solmi, S; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Canteri, R. | |
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON | 1-gen-1991 | Meda, L; Cerofolini, Gf; Ottaviani, Giampiero; Tonini, Rita; Corni, Federico; Balboni, R; Anderle, M; Canteri, R; Dierckx, R. | |
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON | 1-gen-1992 | Cerofolini, Gf; Meda, L; Balboni, R; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Anderle, M; Canteri, R. | |
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects | 1-gen-1992 | Corni, Federico; Tonini, Rita; Ottaviani, Giampiero; Servidori, M; Priolo, F. | |
A fast technique for the quantitative analysis of channeling RBS spectra | 1-gen-1992 | Cerofolini, Gf; Corni, Federico; Ottaviani, Giampiero; Tonini, Rita | |
Processing high-quality silicon for microstrip detectors | 1-gen-1992 | Nava, Filippo; Ottaviani, Giampiero; Tonini, Rita; Frabboni, Stefano; A., Alberigi Quaranta; P., Cantoni; P. L., Frabetti; L., Stagni; G., Queirolo; P. F., Manfredi | |
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID | 1-gen-1992 | Cerofolini, Gf; Corni, Federico; Ottaviani, Giampiero; Tonini, Rita | |
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal | 1-gen-1993 | Cerofolini, Gf; Bertoni, S; Meda, L; Balboni, R; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Para, Af | |
Visible luminescence from silicon by hydrogen implantation and annealing treatments | 1-gen-1994 | Pavesi, L; Giebel, G; Tonini, Rita; Corni, Federico; Nobili, Carlo Emanuele; Ottaviani, Giampiero | |
Recrystallization of strainedlayers with various Gegradients and in the presence of impurities | 1-gen-1994 | Corni, Federico; Tonini, Rita; Balboni, R; Vescan, L. | |
Visible photoluminescence from He‐implanted silicon | 1-gen-1995 | D., Bisero; Corni, Federico; Nobili, Carlo Emanuele; Tonini, Rita; Ottaviani, Giampiero; C., Mazzoleni; L., Pavesi | |
Hydrogen precipitation in highly oversaturated single-crystalline silicon | 1-gen-1995 | Cerofolini, Gf; Balboni, R; Bisero, D; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Brusa, Rs; Zecca, A; Ceschini, M; Giebel, G; Pavesi, L. | |
Hydrogen determination in Si-rich oxide thin films | 1-gen-1996 | Monelli, A; Corni, Federico; Tonini, Rita; Ferrari, C; Ottaviani, Giampiero; Zanotti, L; Queirolo, G. | |
Silicon interstitials generation during the exposure of silicon to hydrogen plasma | 1-gen-1996 | Tonini, Rita; Monelli, A; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Queirolo, G. | |
Bandgap widening in quantum sieves | 1-gen-1996 | Cerofolini, Gf; Meda, L; Bisero, D; Corni, Federico; Ottaviani, Giampiero; Tonini, Rita | |
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si | 1-gen-1996 | Corni, Federico; Frabboni, Stefano; Tonini, Rita; Ottaviani, Giampiero; Queirolo, G. | |
Radiation enhanced transport of hydrogen in SiO2 | 1-gen-1997 | Corni, Federico; Monelli, A; Ottaviani, Giampiero; Tonini, Rita; Queirolo, G; Zanotti, L. | |
Evolution of defect profiles in He-implanted silicon studied by slow positrons | 1-gen-1997 | Brusa, Rs; Karwasz, Gp; Tiengo, N; Zecca, A; Corni, Federico; Nobili, Carlo Emanuele; Ottaviani, Giampiero; Tonini, Rita | |
Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation | 1-gen-1997 | G., Ghislotti; B., Nielsen; P., Asoka Kumar; K. G., Lynn; L. F., Di Mauro; Corni, Federico; Tonini, Rita | |
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen | 1-gen-1997 | Frabboni, Stefano; Gambetta, F; Tonini, Rita; Balboni, R; Armigliato, A. |
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