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The dependence of latch-up sensitivity on layout and technology features, as analyzed by electrical measurements, HFIELDS and SPICE simulations, and infrared microscopy characterization 1-gen-1990 E., Zanoni; G., Spiazzi; Pavan, Paolo; M., Cecchetti; M., Muschitiello
Adjacent structure interactions in latch-up dc triggering of CMOS twin-tub and epitaxial technologies 1-gen-1991 Pavan, Paolo; Zanoni, E.; Menozzi, R.; Selmi, L.
Transiently triggered latch-up in CMOS twin-tub and epitaxial technologies 1-gen-1991 Pavan, Paolo; P., Caprara; B., Bonati; E., Zanoni
Adjacent structure interactions in the Latch-up triggering of CMOS twin-tub and epitaxial technologies 1-gen-1991 Pavan, P; Zanoni, E; Menozzi, R; Selmi, Luca
Analysis of dc and ac anomalous latch-up effects in commercial CMOS integrated circuits 1-gen-1991 E., Zanoni; Pavan, Paolo; G., Spiazzi; B., Bonati; C., Canali
Latch-up dc triggering and holding characteristics of n-well, twin-tub and epitaxial CMOS technologies 1-gen-1991 Pavan, Paolo; G., Spiazzi; E., Zanoni; M., Muschitiello; M., Cecchetti
Measurements of avalanche effects and light emission in advanced Si and SiGe bipolar transistors 1-gen-1991 E., Zanoni; S., Bigliardi; Pavan, Paolo; P., Pisoni; C., Canali
A study of ESD induced effects in high-voltage n-MOS and p-MOS transistors 1-gen-1992 Pavan, Paolo; E., Zanoni; B., Bonati; S., Martino; G., Dalla Libera
Impact ionization and light emission phenomena in AlGaAs/GaAs HBT's 1-gen-1992 Pavan, Paolo; E., Zanoni; L., Vendrame; R., Malik; S., Bigliardi; M., Manfredi; A., Di Carlo; P., Lugli; C., Canali
Negative base current, impact-ionization and light emission phenomena in AlGaAs/GaAs HBT's 1-gen-1992 E., Zanoni; R., Malik; J., Nagle; Pavan, Paolo; L., Vendrame; C., Canali
NEGATIVE BASE CURRENT AND IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HBTS 1-gen-1992 Zanoni, E; Malik, R; Pavan, Paolo; Nagle, J; Paccagnella, A; Canali, Claudio
Impact-ionization phenomena in AlGaAs/GaAs HBT's 1-gen-1992 A., Di Carlo; P., Lugli; Pavan, Paolo; E., Zanoni; R., Malik
Transiently triggered latch-up in CMOS twin-tub and epitaxial technologies 1-gen-1992 Pavan, Paolo; P., Caprara; M., Stucchi; E., Zanoni
A study of ESD- induced defects in high-voltage nMOS and pMOS transistors 1-gen-1992 Pavan, P.; Zanoni, E.; Bonati, B.; Martion, S.; Libera, G. D.
Explanation of current crowding phenomena induced by impact ionization in advanced Si bipolar transistors by means of electrical measurements and light emission microscopy 1-gen-1992 Pavan, Paolo; L., Vendrame; S., Bigliardi; A., Marty; A., Chantre; E., Zanoni
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 1-gen-1992 E., Zanoni; E. F., Crabbe; J. M. C., Stork; Pavan, Paolo; Verzellesi, Giovanni; L., Vendrame; Canali, Claudio
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors 1-gen-1992 Verzellesi, Giovanni; L., Vendrame; R., Turetta; Pavan, Paolo; A., Chantre; A., Marty; M., Cavone; R., Rivoir; E., Zanoni
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 1-gen-1993 Verzellesi, Giovanni; Baccarani, G.; Canali, Claudio; Pavan, Paolo; Vendrame, L.; Zanoni, E.
Measurement of the electron impact-ionization coefficient in <100> GaAs at low electric fields by means of AlGaAs/GaAs Heterojunction Bipolar Transistors 1-gen-1993 C., Canali; R. J., Malik; A., Neviani; Pavan, Paolo; C., Tedesco; E., Zanoni
Improving reliability and safety of automotive electronics: research activities within the PROMETHEUS project 1-gen-1993 E., Zanoni; Pavan, Paolo
Mostrati risultati da 1 a 20 di 279
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