Sfoglia per Autore
Deep traps in Beta-rhombohedral boron
1975 Prudenziati, Maria; Canali, Claudio
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium
1977 Ottaviani, Giampiero; Canali, Claudio; G., Ferrari; R., Ferrari; G., Majni; Prudenziati, Maria; S. S. L. a., U.
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics
1978 Canali, Claudio; F., Catellani; Ottaviani, Giampiero; Prudenziati, Maria
Piezoresistive effects in thick-film resistors
1980 Canali, Claudio; D., Malavasi; Morten, Bruno; Prudenziati, Maria; Taroni, Andrea
Strain Sensitivity in Thick-Film Resistors
1980 Canali, Claudio; D., Malvasi; Morten, Bruno; Prudenziati, Maria; Taroni, Andrea
A temperature Compensated Ultrasonic Sensor Operating in Air for Distance and Proximity Measurements
1982 Canali, Claudio; G., De Cicco; Morten, Bruno; Prudenziati, Maria; Taroni, Andrea
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors
1992 E., Zanoni; E. F., Crabbe; J. M. C., Stork; Pavan, Paolo; Verzellesi, Giovanni; L., Vendrame; Canali, Claudio
NEGATIVE BASE CURRENT AND IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HBTS
1992 Zanoni, E; Malik, R; Pavan, Paolo; Nagle, J; Paccagnella, A; Canali, Claudio
Impact-ionization effects in advanced Si bipolar transistors
1993 Verzellesi, Giovanni; Pavan, Paolo; E., Zanoni; Canali, Claudio
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor
1993 Verzellesi, Giovanni; Baccarani, G.; Canali, Claudio; Pavan, Paolo; Vendrame, L.; Zanoni, E.
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs
1993 E., Zanoni; Ef, Crabbe; Jmc, Stork; Pavan, Paolo; Verzellesi, Giovanni; L., Vendrame; Canali, Claudio
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal
1993 Verzellesi, Giovanni; R., Turetta; Pavan, Paolo; A., Collini; A., Chantre; A., Marty; Canali, Claudio; E., Zanoni
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION
1993 Bacchetta, N; Bisello, D; Canali, Claudio; Fuochi, Pg; Gotra, Y; Paccagnella, A; Verzellesi, Giovanni
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS
1993 Bacchetta, N; Bisello, D; Canali, Claudio; DA ROS, R; Fuochi, Pg; Fusaro, G; Giraldo, A; Gotra, Y; Paccagnella, A; Verzellesi, Giovanni
HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
1993 Zanoni, E; Vendrame, L; Pavan, Paolo; Manfredi, M; Bigliardi, S; Malik, R; Canali, Claudio
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS
1994 Canali, Claudio; Capasso, F; Malik, R; Neviani, A; Pavan, Paolo; Tedesco, C; Zanoni, E.
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY
1994 Bacchetta, N; Bisello, D; Canali, Claudio; DA ROS, R; Giraldo, A; Gotra, Y; Paccagnella, A; Piacentino, Gm; Verzellesi, Giovanni
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's
1996 Canali, Claudio; Pavan, Paolo; Dicarlo, A; Lugli, P; Malik, R; Manfredi, M; Neviani, A; Vendrame, L; Zanoni, E; Zandler, G.
Breakdown and low-temperature anomalous effects in 6H SiC JFETs
1998 G., Meneghesso; A., Bartolini; Verzellesi, Giovanni; A., Cavallini; A., Castaldini; Canali, Claudio; E., Zanoni
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors
1999 Nava, Filippo; P., Vanni; Canali, Claudio; E., Vittone; P., Polesello; U., Biggeri; C., Leroy
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Deep traps in Beta-rhombohedral boron | 1-gen-1975 | Prudenziati, Maria; Canali, Claudio | |
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium | 1-gen-1977 | Ottaviani, Giampiero; Canali, Claudio; G., Ferrari; R., Ferrari; G., Majni; Prudenziati, Maria; S. S. L. a., U. | |
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics | 1-gen-1978 | Canali, Claudio; F., Catellani; Ottaviani, Giampiero; Prudenziati, Maria | |
Piezoresistive effects in thick-film resistors | 1-gen-1980 | Canali, Claudio; D., Malavasi; Morten, Bruno; Prudenziati, Maria; Taroni, Andrea | |
Strain Sensitivity in Thick-Film Resistors | 1-gen-1980 | Canali, Claudio; D., Malvasi; Morten, Bruno; Prudenziati, Maria; Taroni, Andrea | |
A temperature Compensated Ultrasonic Sensor Operating in Air for Distance and Proximity Measurements | 1-gen-1982 | Canali, Claudio; G., De Cicco; Morten, Bruno; Prudenziati, Maria; Taroni, Andrea | |
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors | 1-gen-1992 | E., Zanoni; E. F., Crabbe; J. M. C., Stork; Pavan, Paolo; Verzellesi, Giovanni; L., Vendrame; Canali, Claudio | |
NEGATIVE BASE CURRENT AND IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HBTS | 1-gen-1992 | Zanoni, E; Malik, R; Pavan, Paolo; Nagle, J; Paccagnella, A; Canali, Claudio | |
Impact-ionization effects in advanced Si bipolar transistors | 1-gen-1993 | Verzellesi, Giovanni; Pavan, Paolo; E., Zanoni; Canali, Claudio | |
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor | 1-gen-1993 | Verzellesi, Giovanni; Baccarani, G.; Canali, Claudio; Pavan, Paolo; Vendrame, L.; Zanoni, E. | |
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs | 1-gen-1993 | E., Zanoni; Ef, Crabbe; Jmc, Stork; Pavan, Paolo; Verzellesi, Giovanni; L., Vendrame; Canali, Claudio | |
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal | 1-gen-1993 | Verzellesi, Giovanni; R., Turetta; Pavan, Paolo; A., Collini; A., Chantre; A., Marty; Canali, Claudio; E., Zanoni | |
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION | 1-gen-1993 | Bacchetta, N; Bisello, D; Canali, Claudio; Fuochi, Pg; Gotra, Y; Paccagnella, A; Verzellesi, Giovanni | |
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS | 1-gen-1993 | Bacchetta, N; Bisello, D; Canali, Claudio; DA ROS, R; Fuochi, Pg; Fusaro, G; Giraldo, A; Gotra, Y; Paccagnella, A; Verzellesi, Giovanni | |
HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR | 1-gen-1993 | Zanoni, E; Vendrame, L; Pavan, Paolo; Manfredi, M; Bigliardi, S; Malik, R; Canali, Claudio | |
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS | 1-gen-1994 | Canali, Claudio; Capasso, F; Malik, R; Neviani, A; Pavan, Paolo; Tedesco, C; Zanoni, E. | |
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY | 1-gen-1994 | Bacchetta, N; Bisello, D; Canali, Claudio; DA ROS, R; Giraldo, A; Gotra, Y; Paccagnella, A; Piacentino, Gm; Verzellesi, Giovanni | |
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's | 1-gen-1996 | Canali, Claudio; Pavan, Paolo; Dicarlo, A; Lugli, P; Malik, R; Manfredi, M; Neviani, A; Vendrame, L; Zanoni, E; Zandler, G. | |
Breakdown and low-temperature anomalous effects in 6H SiC JFETs | 1-gen-1998 | G., Meneghesso; A., Bartolini; Verzellesi, Giovanni; A., Cavallini; A., Castaldini; Canali, Claudio; E., Zanoni | |
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors | 1-gen-1999 | Nava, Filippo; P., Vanni; Canali, Claudio; E., Vittone; P., Polesello; U., Biggeri; C., Leroy |
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