Sfoglia per Autore
Interdiffusion of thin chromium and gold films deposited on silicon
1976 Majni, Giuseppe; Ottaviani, Giampiero; Prudenziati, Maria
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium
1977 Ottaviani, Giampiero; Canali, Claudio; G., Ferrari; R., Ferrari; G., Majni; Prudenziati, Maria; S. S. L. a., U.
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics
1978 Canali, Claudio; F., Catellani; Ottaviani, Giampiero; Prudenziati, Maria
Electronic properties of Silicon - transition metal interface compounds
1985 CALANDRA BUONAURA, Carlo; Bisi, Olmes; Ottaviani, Giampiero
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface
1985 Valeri, Sergio; DEL PENNINO, Umberto; P., Lomellini; Ottaviani, Giampiero
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide
1989 Ottaviani, G.; Nobili, C.; Nava, F.; Affronte, M.; Manfredini, T.; Matacotta, F. C.; Galli, E.
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide
1989 Ottaviani, G.; Nobili, C.; Nava, F.; Affronte, M.; Manfredini, T.; Matacotta, F. C.; Galli, E.
Characterization of Bioacceptable Carbon Materials
1990 Magri, Rita; C., Mariani; Ottaviani, Giampiero
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON
1991 Meda, L; Cerofolini, Gf; Ottaviani, Giampiero; Tonini, Rita; Corni, Federico; Balboni, R; Anderle, M; Canteri, R; Dierckx, R.
Low temperature dopant activation of BF2 implanted silicon
1991 G., Queirolo; C., Bresolin; D., Robba; M., Anderle; R., Canteri; A., Armigliato; Ottaviani, Giampiero; Frabboni, Stefano
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS
1991 Fabbri, R; Servidori, M; Solmi, S; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Canteri, R.
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2
1991 Valeri, Sergio; Dibona, A; Ottaviani, Giampiero; Procop, M.
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON
1992 Cerofolini, Gf; Meda, L; Balboni, R; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Anderle, M; Canteri, R.
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects
1992 Corni, Federico; Tonini, Rita; Ottaviani, Giampiero; Servidori, M; Priolo, F.
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION
1992 Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Queirolo, G; Bisero, D; Bresolin, C; Fabbri, R; Servidori, M.
A fast technique for the quantitative analysis of channeling RBS spectra
1992 Cerofolini, Gf; Corni, Federico; Ottaviani, Giampiero; Tonini, Rita
ION MIXING IN SI/GE LAYERED STRUCTURES
1992 Zhu, B; Chow, Jt; Xia, W; Lau, Ss; Butz, R; Mantl, S; Corni, Federico; Ottaviani, Giampiero
Processing high-quality silicon for microstrip detectors
1992 Nava, Filippo; Ottaviani, Giampiero; Tonini, Rita; Frabboni, Stefano; A., Alberigi Quaranta; P., Cantoni; P. L., Frabetti; L., Stagni; G., Queirolo; P. F., Manfredi
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID
1992 Cerofolini, Gf; Corni, Federico; Ottaviani, Giampiero; Tonini, Rita
A simple on-line system employed in diffraction experiments
1993 Corni, Federico; Mascellani, V; Mazzega, Ezio; Michelini, M; Ottaviani, Giampiero
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Interdiffusion of thin chromium and gold films deposited on silicon | 1-gen-1976 | Majni, Giuseppe; Ottaviani, Giampiero; Prudenziati, Maria | |
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium | 1-gen-1977 | Ottaviani, Giampiero; Canali, Claudio; G., Ferrari; R., Ferrari; G., Majni; Prudenziati, Maria; S. S. L. a., U. | |
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics | 1-gen-1978 | Canali, Claudio; F., Catellani; Ottaviani, Giampiero; Prudenziati, Maria | |
Electronic properties of Silicon - transition metal interface compounds | 1-gen-1985 | CALANDRA BUONAURA, Carlo; Bisi, Olmes; Ottaviani, Giampiero | |
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface | 1-gen-1985 | Valeri, Sergio; DEL PENNINO, Umberto; P., Lomellini; Ottaviani, Giampiero | |
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide | 1-gen-1989 | Ottaviani, G.; Nobili, C.; Nava, F.; Affronte, M.; Manfredini, T.; Matacotta, F. C.; Galli, E. | |
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide | 1-gen-1989 | Ottaviani, G.; Nobili, C.; Nava, F.; Affronte, M.; Manfredini, T.; Matacotta, F. C.; Galli, E. | |
Characterization of Bioacceptable Carbon Materials | 1-gen-1990 | Magri, Rita; C., Mariani; Ottaviani, Giampiero | |
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON | 1-gen-1991 | Meda, L; Cerofolini, Gf; Ottaviani, Giampiero; Tonini, Rita; Corni, Federico; Balboni, R; Anderle, M; Canteri, R; Dierckx, R. | |
Low temperature dopant activation of BF2 implanted silicon | 1-gen-1991 | G., Queirolo; C., Bresolin; D., Robba; M., Anderle; R., Canteri; A., Armigliato; Ottaviani, Giampiero; Frabboni, Stefano | |
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS | 1-gen-1991 | Fabbri, R; Servidori, M; Solmi, S; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Canteri, R. | |
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2 | 1-gen-1991 | Valeri, Sergio; Dibona, A; Ottaviani, Giampiero; Procop, M. | |
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON | 1-gen-1992 | Cerofolini, Gf; Meda, L; Balboni, R; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Anderle, M; Canteri, R. | |
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects | 1-gen-1992 | Corni, Federico; Tonini, Rita; Ottaviani, Giampiero; Servidori, M; Priolo, F. | |
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION | 1-gen-1992 | Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Queirolo, G; Bisero, D; Bresolin, C; Fabbri, R; Servidori, M. | |
A fast technique for the quantitative analysis of channeling RBS spectra | 1-gen-1992 | Cerofolini, Gf; Corni, Federico; Ottaviani, Giampiero; Tonini, Rita | |
ION MIXING IN SI/GE LAYERED STRUCTURES | 1-gen-1992 | Zhu, B; Chow, Jt; Xia, W; Lau, Ss; Butz, R; Mantl, S; Corni, Federico; Ottaviani, Giampiero | |
Processing high-quality silicon for microstrip detectors | 1-gen-1992 | Nava, Filippo; Ottaviani, Giampiero; Tonini, Rita; Frabboni, Stefano; A., Alberigi Quaranta; P., Cantoni; P. L., Frabetti; L., Stagni; G., Queirolo; P. F., Manfredi | |
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID | 1-gen-1992 | Cerofolini, Gf; Corni, Federico; Ottaviani, Giampiero; Tonini, Rita | |
A simple on-line system employed in diffraction experiments | 1-gen-1993 | Corni, Federico; Mascellani, V; Mazzega, Ezio; Michelini, M; Ottaviani, Giampiero |
Legenda icone
- file ad accesso aperto
- file disponibili sulla rete interna
- file disponibili agli utenti autorizzati
- file disponibili solo agli amministratori
- file sotto embargo
- nessun file disponibile