Sfoglia per Autore
Electron holographic observations of the electrostatic field associated with thin reverse-biased p-n junctions
1985 Frabboni, Stefano; Matteucci, G; Pozzi, G; Vanzi, M.
On the visibility of small SiAs particles in silicon by HREM
1987 A., Armigliato; A., Bourret; Frabboni, Stefano; A., Parisini
Observations of electrostatic field by electron holography: the case of reverse-biased p-n junctions
1987 Frabboni, Stefano; G. MATTEUCCI AND G., Pozzi
On the silicon dioxide/polycrystalline silicon interface width measurement
1988 G., Queirolo; S., Manzini; L., Meda; M., Anderle; R., Canteri; A., Armigliato; Frabboni, Stefano
Contrast of small SiX particles in silicon by computed HREM images
1988 Armigliato, A; Bourret, A; Frabboni, Stefano; Parisini, A.
Temperature dependence of damage in boron implanted silicon
1989 G., Ottaviani; F., Nava; R., Tonini; Frabboni, Stefano; G. F. CEROFOLINI AND P., Cantoni
DOPANT ACTIVATION, CARRIER MOBILITY, AND TEM STUDIES IN POLYCRYSTALLINE SILICON FILMS
1990 Queirolo, G; Servida, E; Baldi, L; Pignatel, G; Armigliato, A; Frabboni, Stefano; Corticelli, F.
Thermal wave measurements in ion-implanted silicon
1990 Queirolo, G.; Zaccherini, C.; Frabboni, S.
Electon spectroscopic imaging of dopant precipitation and segregation in silicon
1991 Frabboni, Stefano; Lulli, G; MERLI P., G; Migliori, A; Bauer, R.
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS
1991 Fabbri, R; Servidori, M; Solmi, S; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Canteri, R.
Low temperature dopant activation of BF2 implanted silicon
1991 G., Queirolo; C., Bresolin; D., Robba; M., Anderle; R., Canteri; A., Armigliato; Ottaviani, Giampiero; Frabboni, Stefano
CBED STRAIN-MEASUREMENTS IN BORON IMPLANTED SILICON
1991 Balboni, R; Frabboni, Stefano
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON
1992 Cerofolini, Gf; Meda, L; Balboni, R; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Anderle, M; Canteri, R.
Processing high-quality silicon for microstrip detectors
1992 Nava, Filippo; Ottaviani, Giampiero; Tonini, Rita; Frabboni, Stefano; A., Alberigi Quaranta; P., Cantoni; P. L., Frabetti; L., Stagni; G., Queirolo; P. F., Manfredi
STRUCTURAL AND ANALYTICAL CHARACTERIZATION OF SI(1-X)GEX/SI HETEROSTRUCTURES BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND CHANNELING, ANALYTICAL ELECTRON-MICROSCOPY AND DOUBLE CRYSTAL X-RAY-DIFFRACTOMETRY
1992 Armigliato, A; Servidori, M; Cembali, F; Fabbri, R; Rosa, R; Corticelli, F; Govoni, D; Drigo, Av; Mazzer, M; Romanato, F; Frabboni, Stefano; Balboni, R; Iyer, Ss; Guerrieri, A.
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION
1992 Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Queirolo, G; Bisero, D; Bresolin, C; Fabbri, R; Servidori, M.
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal
1993 Cerofolini, Gf; Bertoni, S; Meda, L; Balboni, R; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Para, Af
On the assessment of local stress distribution in integrated circuits
1993 J., Vanhellemont; I., DE WOLF; Kfg, Janssens; Frabboni, Stefano; R., Balboni; A., Armigliato
DETERMINATION OF LATTICE STRAIN IN LOCAL ISOLATION STRUCTURES BY ELECTRON-DIFFRACTION TECHNIQUES AND MICRO-RAMAN SPECTROSCOPY
1993 Armigliato, A; Barboni, R; Dewolf, I; Frabboni, Stefano; Janssens, Kgf; Vanhellemont, J.
X-RAY-EMISSION MODULATION BY ELECTRON CHANNELING AND SITE OCCUPANCY IN GARNETS
1994 Balboni, R; Frabboni, Stefano; Rinaldi, R; Spigarelli, S.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Electron holographic observations of the electrostatic field associated with thin reverse-biased p-n junctions | 1-gen-1985 | Frabboni, Stefano; Matteucci, G; Pozzi, G; Vanzi, M. | |
On the visibility of small SiAs particles in silicon by HREM | 1-gen-1987 | A., Armigliato; A., Bourret; Frabboni, Stefano; A., Parisini | |
Observations of electrostatic field by electron holography: the case of reverse-biased p-n junctions | 1-gen-1987 | Frabboni, Stefano; G. MATTEUCCI AND G., Pozzi | |
On the silicon dioxide/polycrystalline silicon interface width measurement | 1-gen-1988 | G., Queirolo; S., Manzini; L., Meda; M., Anderle; R., Canteri; A., Armigliato; Frabboni, Stefano | |
Contrast of small SiX particles in silicon by computed HREM images | 1-gen-1988 | Armigliato, A; Bourret, A; Frabboni, Stefano; Parisini, A. | |
Temperature dependence of damage in boron implanted silicon | 1-gen-1989 | G., Ottaviani; F., Nava; R., Tonini; Frabboni, Stefano; G. F. CEROFOLINI AND P., Cantoni | |
DOPANT ACTIVATION, CARRIER MOBILITY, AND TEM STUDIES IN POLYCRYSTALLINE SILICON FILMS | 1-gen-1990 | Queirolo, G; Servida, E; Baldi, L; Pignatel, G; Armigliato, A; Frabboni, Stefano; Corticelli, F. | |
Thermal wave measurements in ion-implanted silicon | 1-gen-1990 | Queirolo, G.; Zaccherini, C.; Frabboni, S. | |
Electon spectroscopic imaging of dopant precipitation and segregation in silicon | 1-gen-1991 | Frabboni, Stefano; Lulli, G; MERLI P., G; Migliori, A; Bauer, R. | |
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS | 1-gen-1991 | Fabbri, R; Servidori, M; Solmi, S; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Canteri, R. | |
Low temperature dopant activation of BF2 implanted silicon | 1-gen-1991 | G., Queirolo; C., Bresolin; D., Robba; M., Anderle; R., Canteri; A., Armigliato; Ottaviani, Giampiero; Frabboni, Stefano | |
CBED STRAIN-MEASUREMENTS IN BORON IMPLANTED SILICON | 1-gen-1991 | Balboni, R; Frabboni, Stefano | |
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON | 1-gen-1992 | Cerofolini, Gf; Meda, L; Balboni, R; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Anderle, M; Canteri, R. | |
Processing high-quality silicon for microstrip detectors | 1-gen-1992 | Nava, Filippo; Ottaviani, Giampiero; Tonini, Rita; Frabboni, Stefano; A., Alberigi Quaranta; P., Cantoni; P. L., Frabetti; L., Stagni; G., Queirolo; P. F., Manfredi | |
STRUCTURAL AND ANALYTICAL CHARACTERIZATION OF SI(1-X)GEX/SI HETEROSTRUCTURES BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND CHANNELING, ANALYTICAL ELECTRON-MICROSCOPY AND DOUBLE CRYSTAL X-RAY-DIFFRACTOMETRY | 1-gen-1992 | Armigliato, A; Servidori, M; Cembali, F; Fabbri, R; Rosa, R; Corticelli, F; Govoni, D; Drigo, Av; Mazzer, M; Romanato, F; Frabboni, Stefano; Balboni, R; Iyer, Ss; Guerrieri, A. | |
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION | 1-gen-1992 | Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Queirolo, G; Bisero, D; Bresolin, C; Fabbri, R; Servidori, M. | |
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal | 1-gen-1993 | Cerofolini, Gf; Bertoni, S; Meda, L; Balboni, R; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Para, Af | |
On the assessment of local stress distribution in integrated circuits | 1-gen-1993 | J., Vanhellemont; I., DE WOLF; Kfg, Janssens; Frabboni, Stefano; R., Balboni; A., Armigliato | |
DETERMINATION OF LATTICE STRAIN IN LOCAL ISOLATION STRUCTURES BY ELECTRON-DIFFRACTION TECHNIQUES AND MICRO-RAMAN SPECTROSCOPY | 1-gen-1993 | Armigliato, A; Barboni, R; Dewolf, I; Frabboni, Stefano; Janssens, Kgf; Vanhellemont, J. | |
X-RAY-EMISSION MODULATION BY ELECTRON CHANNELING AND SITE OCCUPANCY IN GARNETS | 1-gen-1994 | Balboni, R; Frabboni, Stefano; Rinaldi, R; Spigarelli, S. |
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