Sfoglia per Autore  ABRAMO, ANTONIO

opzioni
Mostrati risultati da 1 a 20 di 21
Titolo Data di pubblicazione Autore(i) File
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 1-gen-1994 A., Ghetti; Selmi, Luca; Sangiorgi, Enrico; Abramo, Antonio; F., Venturi
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 1-gen-1999 Todon, A; Selmi, Luca; Abramo, Antonio; Sangiorgi, Enrico
Two dimensional quantum simulation of silicon MOSFETs 1-gen-1999 Abramo, Antonio; Cardin, A.; Selmi, Luca; Sangiorgi, Enrico
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 1-gen-2000 Abramo, Antonio; A., Cardin; Selmi, Luca; Sangiorgi, Enrico
Tunnelling Injection in Thin Oxide MOS Capacitors 1-gen-2000 . DALLA SERRA, A.; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Sangiorgi, E.
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 1-gen-2000 A., Todon; Selmi, Luca; Abramo, Antonio; Sangiorgi, Enrico
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 1-gen-2000 DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 1-gen-2000 Abramo, Antonio; Cardin, A.; Selmi, Luca; Sangiorgi, Enrico
Impact Ionization and Photon Emission in MOS Capacitors and FETs 1-gen-2000 Palestri, Pierpaolo; M., Pavesi; P., Rigolli; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico
Well-tempered MOSFETs: 1D versus 2D quantum analysis 1-gen-2000 Abramo, Antonio; Selmi, Luca; Yu, Z; Dutton, R.
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 1-gen-2001 DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Widdershoven, F.
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 1-gen-2002 Palestri, Pierpaolo; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; Sangiorgi, Enrico; M., Pavesi; P., Rigolli; F., Widdershoven
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 1-gen-2002 Esseni, David; Abramo, Antonio; Selmi, Luca; Sangiorgi, Enrico
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 1-gen-2002 Abramo, Antonio; Selmi, Luca; Zanchetta, Sergio; Todon, A; Sangiorgi, Enrico
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 1-gen-2002 Palestri, P.; Serra, A. D.; Selmi, L.; Pavesi, M.; Rigolli, P. L.; Abramo, A.; Widdershoven, F.; Sangiorgi, E.
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 1-gen-2002 Palestri, Pierpaolo; DALLA SERRA, Alberto; Selmi, Luca; M., Pavesi; Rigolli, P. L.; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico
Device simulation for decananometer MOSFETs 1-gen-2003 Sangiorgi, Enrico; Palestri, Pierpaolo; Esseni, David; Fiegna, C.; Abramo, Antonio; Selmi, Luca
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 1-gen-2003 Esseni, David; Abramo, Antonio; Selmi, Luca; Sangiorgi, Enrico
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations 1-gen-2003 Lucci, L.; Esseni, D.; Loo, J.; Ponomarev, Y.; Selmi, L.; Abramo, A.; Sangiorgi, E.
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 1-gen-2003 Lucci, Luca; Esseni, David; J., Loo; Y., Ponomarev; Selmi, Luca; Abramo, Antonio; Sangiorgi, Enrico
Mostrati risultati da 1 a 20 di 21
Legenda icone

  •  file ad accesso aperto
  •  file disponibili sulla rete interna
  •  file disponibili agli utenti autorizzati
  •  file disponibili solo agli amministratori
  •  file sotto embargo
  •  nessun file disponibile