Sfoglia per Autore  ZAGNI, NICOLO'

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Mostrati risultati da 1 a 20 di 43
Titolo Data di pubblicazione Autore(i) File
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 1-gen-2016 Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 1-gen-2017 Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 1-gen-2017 Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 1-gen-2017 Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 1-gen-2017 Zagni, Nicolò; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 1-gen-2017 Puglisi, Francesco Maria; Zagni, Nicolo'; Larcher, Luca; Pavan, Paolo
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 1-gen-2017 Zagni, Nicolo; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 1-gen-2017 Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F. M.; Verzellesi, G.; Selmi, L
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 1-gen-2018 Puglisi, Francesco Maria; Pacchioni, Lorenzo; Zagni, Nicolo; Pavan, Paolo
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 1-gen-2018 Puglisi, Francesco Maria; Zagni, Nicolo; Larcher, Luca; Pavan, Paolo
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 1-gen-2018 Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A.
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 1-gen-2018 Zagni, Nicolo; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity 1-gen-2019 Canicoba, Noelia Devesa; Zagni, Nicolò; Liu, Fangze; McCuistian, Gary; Fernando, Kasun; Bellezza, Hugo; Traoré, Boubacar; Rogel, Regis; Tsai, Hsinhan; Le Brizoual, Laurent; Nie, Wanyi; Crochet, Jared J.; Tretiak, Sergei; Katan, Claudine; Even, Jacky; Kanatzidis, Mercouri G.; Alphenaar, Bruce W.; Blancon, Jean-Christophe; Alam, Muhammad Ashraf; Mohite, Aditya D.
Insights into the off-state breakdown mechanisms in power GaN HEMTs 1-gen-2019 Zagni, Nicolo'; Puglisi, F. M.; Pavan, P.; Chini, A.; Verzellesi, G.
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 1-gen-2019 Zagni, N.; Puglisi, F. M.; Pavan, P.; Verzellesi, G.
Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors 1-gen-2019 Zagni, N.; Pavan, P.; Alam, M. A.
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 1-gen-2020 Zagni, Nicolo; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
A memory window expression to evaluate the endurance of ferroelectric FETs 1-gen-2020 Zagni, Nicolo'; Pavan, Paolo; Ashraful Alam, Muhammad
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 1-gen-2020 Zagni, Nicolo; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Verzellesi, Giovanni
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 1-gen-2020 Zagni, Nicolo'; Caruso, Enrico; Puglisi, Francesco Maria; Pavan, Paolo; Palestri, Pierpaolo; Verzellesi, Giovanni
Mostrati risultati da 1 a 20 di 43
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