Sfoglia per Serie TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING
A review of failure modes and mechanisms of GaN-based HEMTs
2007-01-01 E., Zanoni; G., Meneghesso; Verzellesi, Giovanni; F., Danesin; M., Meneghini; F., Rampazzo; A., Tazzoli; F., Zanon
Application and benefits of target programming algorithms for ferroelectric HfO2transistors
2020-01-01 Zhou, H.; Ocker, J.; Padovani, A.; Pesic, M.; Trentzsch, M.; Dunkel, S.; Mulaosmanovic, H.; Slesazeck, S.; Larcher, L.; Beyer, S.; Muller, S.; Mikolajick, T.
Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric
2008-01-01 G., Bersuker; D., Heh; C., Young; H., Park; P., Khanal; Larcher, Luca; Padovani, Andrea; P., Lenahan; J., Ryan; B. H., Lee; H., Tseng; R., Jammy
CMOS and Interconnect Reliability - Flash Reliability/Hot Carrier Effects
2003-01-01 Pavan, P.; Owens, A.
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses
2018-01-01 Shi, Y.; Pan, C.; Chen, V.; Raghavan, N.; Pey, K. L.; Puglisi, F. M.; Pop, E.; Wong, H. -S. P.; Lanza, M.
Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability
2019-01-01 Pesic, M.; Padovani, A.; Slcsazeck, S.; Mikolajick, T.; Larcher, L.
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective
2018-01-01 Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A.
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs
2001-01-01 Esseni, David; M., Mastrapasqua; C., Fiegna; G. K., Celler; Selmi, Luca; Sangiorgi, Enrico
Investigating the Statistical-Physical Nature of MgO Dielectric Breakdown in STT-MRAM at Different Operating Conditions
2019-01-01 Lim, J. H.; Raghavan, N.; Padovani, A.; Kwon, J. H.; Yamane, K.; Yang, H.; Naik, V. B.; Larcher, L.; Lee, K. H.; Pey, K. L.
Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling
2010-01-01 Molas, G.; Masoero, L.; Blaise, P.; Padovani, A.; Colonna, J. P.; Vianello, E.; Bocquet, M.; Nowak, E.; Gasulla, M.; Cueto, O.; Grampeix, H.; Martin, F.; Kies, R.; Brianceau, P.; Gely, M.; Papon, A. M.; Lafond, D.; Barnes, J. P.; Licitra, C.; Ghibaudo, G.; Larcher, L.; Deleonibus, S.; De Salvo, B.
Multiscale modeling of neuromorphic computing: From materials to device operations
2018-01-01 Larcher, L.; Padovani, A.; Di Lecce, V.
New model of tunnelling current and SILC in ultra-thin oxides
1998-01-01 Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G.
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps
2012-01-01 Meneghini, M.; Bertin, M.; Dal Santo, G.; Stocco, A.; Chini, Alessandro; Marcon, D.; Malinowski, P. E.; Mura, G.; Musu, E.; Vanzi, M.; Meneghesso, G.; Zanoni, E.
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations
2003-01-01 Lucci, L.; Esseni, D.; Loo, J.; Ponomarev, Y.; Selmi, L.; Abramo, A.; Sangiorgi, E.
Quantum electronics and compound semiconductors - HEMTs: Physics and new technologies
2004-01-01 Suemitsu, T.; Verzellesi, G.
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
2017-01-01 Hahn, H.; Deshpande, V.; Caruso, E.; Sant, S.; O'Connor, E.; Baumgartner, Y.; Sousa, M.; Caimi, D.; Olziersky, A.; Palestri, P.; Selmi, L.; Schenk, A.; Czornomaz, L.
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs
2011-01-01 Conzatti, Francesco; M. G., Pala; Esseni, David; E., Bano; Selmi, Luca
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| A review of failure modes and mechanisms of GaN-based HEMTs | 1-gen-2007 | E., Zanoni; G., Meneghesso; Verzellesi, Giovanni; F., Danesin; M., Meneghini; F., Rampazzo; A., Tazzoli; F., Zanon | |
| Application and benefits of target programming algorithms for ferroelectric HfO2transistors | 1-gen-2020 | Zhou, H.; Ocker, J.; Padovani, A.; Pesic, M.; Trentzsch, M.; Dunkel, S.; Mulaosmanovic, H.; Slesazeck, S.; Larcher, L.; Beyer, S.; Muller, S.; Mikolajick, T. | |
| Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric | 1-gen-2008 | G., Bersuker; D., Heh; C., Young; H., Park; P., Khanal; Larcher, Luca; Padovani, Andrea; P., Lenahan; J., Ryan; B. H., Lee; H., Tseng; R., Jammy | |
| CMOS and Interconnect Reliability - Flash Reliability/Hot Carrier Effects | 1-gen-2003 | Pavan, P.; Owens, A. | |
| Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses | 1-gen-2018 | Shi, Y.; Pan, C.; Chen, V.; Raghavan, N.; Pey, K. L.; Puglisi, F. M.; Pop, E.; Wong, H. -S. P.; Lanza, M. | |
| Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability | 1-gen-2019 | Pesic, M.; Padovani, A.; Slcsazeck, S.; Mikolajick, T.; Larcher, L. | |
| Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective | 1-gen-2018 | Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A. | |
| An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs | 1-gen-2001 | Esseni, David; M., Mastrapasqua; C., Fiegna; G. K., Celler; Selmi, Luca; Sangiorgi, Enrico | |
| Investigating the Statistical-Physical Nature of MgO Dielectric Breakdown in STT-MRAM at Different Operating Conditions | 1-gen-2019 | Lim, J. H.; Raghavan, N.; Padovani, A.; Kwon, J. H.; Yamane, K.; Yang, H.; Naik, V. B.; Larcher, L.; Lee, K. H.; Pey, K. L. | |
| Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling | 1-gen-2010 | Molas, G.; Masoero, L.; Blaise, P.; Padovani, A.; Colonna, J. P.; Vianello, E.; Bocquet, M.; Nowak, E.; Gasulla, M.; Cueto, O.; Grampeix, H.; Martin, F.; Kies, R.; Brianceau, P.; Gely, M.; Papon, A. M.; Lafond, D.; Barnes, J. P.; Licitra, C.; Ghibaudo, G.; Larcher, L.; Deleonibus, S.; De Salvo, B. | |
| Multiscale modeling of neuromorphic computing: From materials to device operations | 1-gen-2018 | Larcher, L.; Padovani, A.; Di Lecce, V. | |
| New model of tunnelling current and SILC in ultra-thin oxides | 1-gen-1998 | Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G. | |
| A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps | 1-gen-2012 | Meneghini, M.; Bertin, M.; Dal Santo, G.; Stocco, A.; Chini, Alessandro; Marcon, D.; Malinowski, P. E.; Mura, G.; Musu, E.; Vanzi, M.; Meneghesso, G.; Zanoni, E. | |
| Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations | 1-gen-2003 | Lucci, L.; Esseni, D.; Loo, J.; Ponomarev, Y.; Selmi, L.; Abramo, A.; Sangiorgi, E. | |
| Quantum electronics and compound semiconductors - HEMTs: Physics and new technologies | 1-gen-2004 | Suemitsu, T.; Verzellesi, G. | |
| A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance | 1-gen-2017 | Hahn, H.; Deshpande, V.; Caruso, E.; Sant, S.; O'Connor, E.; Baumgartner, Y.; Sousa, M.; Caimi, D.; Olziersky, A.; Palestri, P.; Selmi, L.; Schenk, A.; Czornomaz, L. | |
| A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs | 1-gen-2011 | Conzatti, Francesco; M. G., Pala; Esseni, David; E., Bano; Selmi, Luca |
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